MF011000 - SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique Revision:SEMI MF110-1105 - Superseded including mold conditions

including mold conditions

This edition was approved for publication by the global Audits and Reviews Subcommittee on June 28

Referenced SEMI StandardsSEMI G30 — Test Method for Junction-to-Case Thermal Resistance Measurements of Ceramic Packages

• Reduction of communication and computation overhead and cost due to recipe download related transactions by adopting cache operation

注意: 本文書は2002年，投票によりSEMI E6の全面改訂として承認された。

MF011000 - SEMI MF110 - Test Method for Thickness of Epitaxial or Diffused Layers in Silicon by the Angle Lapping and Staining Technique Revision:SEMI MF110-1105 - Superseded including mold conditionsThis Test Method covers a procedure suitable for interlaboratory comparisons of layer thickness. This Test Method is applicable for layers of any resistivity so long as the layer differs from the silicon substrate under it either in conductivity type or by at least one order of magnitude in resistivity. The method described is destructive in nature but is more widely applicable than the alternative infrared method, SEMI MF95. For layers with