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IGW25N120H3 1200V, 25A IGBT Transistor, Infineon. new Thermal resistance approx

SKU: 46817697868

4.0
USD18.00 USD62.00

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  • USA
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Ships within 48 hours · Estimated delivery Jul 28 - Aug 2

Description

Thermal resistance approx

top of the range model in the new line of high ruggedness RF power mosfets

8-600MHz band

In addition

Tested into open and short circuit loads at the output without damage

IGW25N120H3 1200V, 25A IGBT Transistor, Infineon. new Thermal resistance approxThe IGW25N120H3 is a high voltage IGBT in the leaded TO247 package. Rated at 1200V and 25A. Features low switching losses and Trenchstop technology. Genuine Infineon parts supplied. Supplied singly. Please see the datasheet for more details.

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