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The purpose of this document is to present a process for ion implantation
All component gases shall adhere to the appropriate SEMI Specification
This procedure applies to clean filters including those cartridges of metal
本安全ガイドラインは，地域，地区，国家，および国際の規制と組織の政策を適切に考慮して，各現場で採用すべきである。
and procedures are referred to in the individual test methods
M03600 - SEMI M36 - Test Method for Measuring Etch Pit Density (EPD) in Low Dislocation Density Gallium Arsenide Wafers Revision:SEMI M36-0699 - Inactive The purpose of this documentThis test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at www. semi. org April 1999; to be published June 1999. This document provides a method to measure etch pit density (EPD) in low dislocation density GaAs wafers.
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