M09500 - SEMI M95 - Test Method for Net Carrier Density and Resistivity of Silicon Epitaxial Layer by Capacitance-Voltage Measurements with an Evaporated Metal Schottky Diode Revision:SEMI M95-0925 - Current This Test Method measures the

This Test Method measures the total amount of each element

providing guidance and material performance testing for material manufacturers

本スタンダードは，global Physical Interfaces & Carriers Committeeで技術的に承認されている。現版は2010年8月27日，global Audits and Reviews Subcommitteeにて発行が承認された。2010年10月に www

SEMI E87-0302 (technical revision)

SEMI G90-0811 (Reapproved 0823)

M09500 - SEMI M95 - Test Method for Net Carrier Density and Resistivity of Silicon Epitaxial Layer by Capacitance-Voltage Measurements with an Evaporated Metal Schottky Diode Revision:SEMI M95-0925 - Current This Test Method measures the1 Purpose 1. 1 The net carrier density and the resistivity of silicon epitaxial layers are critical parameters in semiconductor device design. Controlling these values during the semiconductor device manufacturing process is essential in determining the devices performance through the margin of the semiconductor device design. 1. 2 This Test Method can be used for research and development, process control, as well as material specification,