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MF039900 - SEMI MF399 - Test Method for Thickness of Heteroepitaxial or Polysilicon Layers Revision:SEMI MF399-00a (Withdrawn 0710) - Withdrawn - Historical SEMI M10-89 (technical revision)

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Description

SEMI M10-89 (technical revision)

SEMI 3D5-0224 (technical revision)

the volume sampled by a single probe is approximately 1011 cm3

To establish a method of determining instantaneous purifier efficiency

This Specification covers substrate requirements for monocrystalline high-purity c-plane (0001) gallium nitride wafers used in semiconductor electronic and optical device manufacturing

MF039900 - SEMI MF399 - Test Method for Thickness of Heteroepitaxial or Polysilicon Layers Revision:SEMI MF399-00a (Withdrawn 0710) - Withdrawn - Historical SEMI M10-89 (technical revision)This standard was originally published by ASTM International as ASTM F399 74T. It was formally approved by ASTM balloting procedures and adhered to ASTM patent requirements. Though ownership of this standard has been transferred to SEMI, it has not been formally approved by SEMI balloting procedures and does not adhere to either SEMI Regulations dealing with patents, or SEMI Style Manual. Available at www. semi. org in June 2010. Originally published

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